Influence of temperature and dimension in a 4H-SiC vertical power MOSFET
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Engineering Research Express
سال: 2020
ISSN: 2631-8695
DOI: 10.1088/2631-8695/abc52b